Astir Grow Led Panel Project...

picolada said:

very convenient!
thank you very much for the explanation,i'll try it with my next scrog..
so if you don't want to water directly from the tap,you just connect the
master unit1000 with the tank (and not tanker like i said before hehehehe)?
right?or not?

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weedman420gr said:

I've already checked every led and everything seems to be ok...they can light all together but its a very faint light..i can barely see it...

When i checked the Red leds , the multimeter went crazy on the screen...

seriously i dont know what is going on....

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PSUAGRO. said:

warm white/640nm...(3-1)???????????? ha ....................you should give 660nm another shot, can't ignore it's effects on root development

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jubiare said:

Dont use those satisled drivers for the better diodes version... that satisled driver frayed 4 cree xpe royal blue!

Honestly! They might work well with de Asian things, anyway I am never to use that satisled again!

There is some amazing drivers on alibaba they are not expensive either

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PSUAGRO. said:

warm white/640nm...(3-1)???????????? ha ....................you should give 660nm another shot, can't ignore it's effects on root development

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Cytokinins regulate cell division in shoots and roots
Most of the cell division in the adult plant occur in the meristems. Shoot meristems are shrunken in
mutant plants overexpressing the gene for cytokinin oxidase , whereas the same mutation causes
enhancement of root growth. There is strong evidence that endogenous cytokinins
regulate cell division in vivo, suppressing division in shoot meristems while enhancing it in root
meristems.
The dose response curve for root growth is hypothesized, like auxin, to be a bell-shaped curve, peaking at
an optimal value of cytokinin signaling level, and falling off on either side of the peak
According to this hypothesis, root level of cytokinin is supraoptimal (above the peak), so that small
decreases will cause increased cell division and growth. The shoot level is assumed to be optimal in this
model....
Shoots in plants with mutated loss-of-function cytokinin receptors are stunted . Cytokinin
plays a role in regulating leaf phyllotaxy.
The number of grains and overall yield in the Habataki variety of Oryza sativa indica rice is greater than
in the Koshihikari variety of Oryza sativa japonica rice, which is thought to be due to a decrease in
function of cytokinin oxidase in indica, which leads to higher cytokinins in the inflorescence, producing
more reproductive organs.(this is of course an action on the inflorescence meristem of the shoot).

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Stem Growth
The mechanisms by which Gibberellins (“GAs&#8221 produces increased stem length and plant growth are poorly understood,
including the interactions with auxin, and require further study.
“For meristematic activity to be maintained in the SAM, GAs must be excluded from the inner cells (of the
meristem).” This allows the inner undifferentiated cells to retain the ability to expand and divide in all
directions. Synthesis of GAs is suppressed in the inner cells of the SAM. (details omitted, involves KNOX
homeodomain transcription factors,)
However, “GAs are necessary for the development of leaf promordia and normal leaf expansion.”
( few details on this aspect are provided.)
“Gibberellins stimulate both cell elongation and cell division...”, so that taller internodes of peas and
deepwater rice have more cells as well as longer cells. It is the intercalary meristem that is stimulated.
GA produces cell elongation by increasing the mechanical extensibility of the cell walls and by
stress relaxation of cell walls, decreasing the wall yield threshold
Unlike auxin, which relies on cell wall acidification via proton extrusion, GA has not been shown to cause
cell wall acidification. The lag times measured for inducing elongation are greater with GA (40 minutes to
3 hours depending on species) than with auxin (c. 10 minutes). Thus there may be
different mechanisms for GA and auxin action, and in fact the effects of exogenously applied GA and auxin
can be additive. However, it is difficult to separate the effects of GA and auxin, as they are usually both
present.

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Promote Stem (And Root) Growth
GAs promote internode elongation in genetically dwarf or rosette plants (the most pronounced effect of
applied GAs), but have little stem-lengthening effect in normal-sized plants. Treatment of
the dwarf rosette form of a Brassicaceae with GA leads to “bolting” (rapid stem growth and flowering). This
sequence of events is frequently seen in long-day-plants (such as spinach) raised in short-day conditions
and then treated with GA. The target organ in grasses such as deepwater rice or wheat is the intercalary
meristem. GAs that promote stem growth also enhance root elongation (at least in pea and Arabidopsis),
and plants genetically deficient in GAs have shorter roots.
Commercially, application of exogenous GA is used to increase sugarcane internode elongation and
therefore sugar yield, especially at cooler temperatures (because these are C4 plants).
Some commercial GA inhibitors (of which there are many, including Chlormequat chloride or cycocel) are
used to decrease plant height by:
• preventing “lodging” (bending over of the stem to the ground) in cereal crops in cool wet climates
• reducing vegetative growth in cotton
• reducing height of fruit trees or containerized herbaceous ornamentals in greenhouses, etc.

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Auxin Transport Regulates Floral Bud Development And Phyllotaxy
Polar(from cell to cell ) auxin transport in the inflorescence meristem is required for normal
floral development. The developing floral meristem depends on auxin being transported to it from
subapical tissues.
Auxin Promotes The Formation Of Lateral And Adventitious Roots
Initiation of lateral (branch) roots and adventitious roots (roots arising from non-root tissue) are stimulated
by high auxin levels (even though the primary root is inhibited by auxin concentrations > 10-8 M). Lateral
roots arise from the pericycle above the elongation and root hair zone. This process requires acropetal
movement of IAA in the vascular parenchyma of the root. IAA is also needed to promote growth and
maintain viability of a developing lateral root. Auxin, by promoting adventitious rooting, is useful in
propagating plants using vegetative cuttings.

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Ethylene induces the formation of roots and root hairs
Ethylene induces adventitious roots in leaves, stems, etc., an effect also caused by auxin but not seen in
ethylene-insensitive mutants. Ethylene is also a positive regulator of root hair
formation

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jubiare said:

Dont use those satisled drivers for the better diodes version... that satisled driver frayed 4 cree xpe royal blue!

Honestly! They might work well with de Asian things, anyway I am never to use that satisled again!

There is some amazing drivers on alibaba they are not expensive either

Click to expand...

Eraserhead said:

I think the issues with 660nm, too much is/was used in many panels.

660nm is most definitely a good thing, but should only be used in moderation. My panels have deep red LEDs, but from 645-675nm, that only makes up roughly 12-13% of all the light the entire panel produces, which is 420nm-750nm.

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What about 699-750 ?
....3-5 % ?

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stardustsailor said:

You're my man ...
Right on,my brother...
This is one of the most sensible light configs ever...

How much is the percentage from 600-699 nm (total reds) ?

My hard guess:
If from 645-675nm is 12-13 % Say ,676-699 is 8%-10% .. ?
and 600-639 is about 15-20% ?
Total 35%-45% ?
Thumbs up ...
I like it,if so ..
Now,we're talkin'....
2:1 for 600-639 nm : 640-680 nm ???

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But there are compromises there also ..

Small particle size phosphors ( 5 μm to 13 μm) are blending better & have less power losses due to absorbance (5-10%) ,
but they suffer from usage degradation and stability (they change emission peaks with heat rising ) ..
They also limit blue light passing through them..

While bigger particle (bigger than 13 μm ) are pretty stable & degrade less with time ,
but they suffer from homogeneity and have power losses of 15-20% ...They also let more blue light pass.

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Once the experiment begins, the seeds will be continuously
spun in centrifuges, to achieve varying levels
of gravity, and given fresh water. The first three days
are considered the “growth phase” of the experiment,
during which the ECs will be exposed to gravity forces
equivalent to Earth’s. For the first 32 hours the seeds
will remain in the darkness, with the exception of a
four-hour exposure to red LED lights. From then until
the end of the “growth phase,” they will be illuminated
with white LED lights. The last three days of the experiment
are called the “stimulation phase,” when they will
be “photostimulated” – or constantly exposed to red,
blue or a combination of red and blue LED lights and
exposed to either microgravity, or levels of gravity found
on Earth, the moon or Mars. During the final phase of
the experiment, cameras in the centrifuges will take
three images per minute to collect the majority of the
scientists’ data

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.....
.....
.....Detailed Description of Preferred Embodiments

As already discussed above, the present invention relates in general to a single light emission source LED device that has optimal properties to be used as greenhouse cultivation light source. Specifically this approach to construct the light sources has optimal properties and flexibility for matching the photosynthesis frequencies in plant cultivation. By using this approach, the light sources can be designed to reach superior PPF and PPF per watt efficiency and performance and very low power consumption and very long operation lifetime when compared to the existing technologies.
In particular the single light emission source LED device provides at least two emission peaks in the wavelength range of 300-800 nm and at least one of the emission peaks has Full Width of Half Maximum (FWHM) at least 50 nm or higher. The emission peaks and relative intensities are selected to match the photosynthesis frequencies for the plant. Also the required PPF quantity for the light source is optimized to meet the plant requirement.
The emission at a frequency of 300-500 nm is generated by the semiconductor LED chip and the emission at frequency of 400-800 nm is generated using a complete or partial wavelength up-conversion of the LED chip radiation power. The partial wavelength up- conversion can be selected to be in range of 5-95 %, preferably 35-65 %, of the semiconductor LED chip radiation. The wavelength up-conversion to produce the 400-800 nm radiation is achieved by using one or more up-conversion materials in proximity with the LED emission source. The wavelength up-conversion is realized by using either organic, inorganic or combination of both types of materials. These materials can be particular (nano- or other size particles), molecular or polymeric materials. Furthermore the materials can have structural arrangement that results in wavelength up-conversion of the emission source . According to one particular embodiment, a lighting fixture for facilitating plant growth comprises a UV LED, optionally with external luminescent emission characteristics.

The LED exhibits typically

a) first phosphorescent spectral characteristics with a peak wavelength in the range of 350 to 550 nm;( uva/blue die / chip )

b) second optional phosphorescent spectral characteristics with a peak wavelength in the range of 600 to 800 nm; and (silicate-nitride phosphor)

c) third optional phosphorescent spectral characteristics with a peak wavelength freely adjustable between 350 and 800 nm.
(silicate - nitride again for us,please...)

In this application "adjustable" peak wavelength as in the above is construed as a peak wavelength that can be adjusted during assembly of the lighting fixture at the factory, and/or also "adjustable" as in an adjustable dial in the lighting fixture for on site peak wavelength adjustment. In addition adjusting the peak wavelengths of the LED during manufacturing process of the LED is also in accordance with the invention, and

"adjustable" should be construed to also include adjustments made during the
manufacturing process of the LED. All aforementioned embodiments of an adjustable peak wavelength, or any other adjustable light source or LED variable are within the scope of this patent application. Preferably the phosphorescent emission intensities of first, optional second and optional third spectral characteristics are adjustable in any ratio.

Figures 2 to 5 illustrate afew examples of the emission peaks of the single light emission source LED devices. In Figure 2, the semiconductor LED chip emission frequency peaks at a wavelength of (die)457 nm with emission peaks Full Width of Half Maximum (FWHM) of 25 nm. In this case the wavelength up-conversion is done by using two up-conversion materials. These two wavelength up-conversion materials have individual emission peaks at (phosphors)660 nm and 604 nm. Figure 2 shows the combined emission peak from these two wavelength up- conversion materials peaking at(final peak )651 nm wavelength with emission peaks FWHM of 101 nm. In this case about 40 % (calculated from the peak intensities) of the semiconductor LED chip emission, is up-converted to 651 nm emission by two individual up-conversion materials.

In Figure 3, the semiconductor LED chip emission frequency peaks at a wavelength of470 nm with emission peaks Full Width of Half Maximum (FWHM) of 30 nm. In this case the wavelength up-conversion is done by using two up-conversion materials. These two wavelength up-conversion materials have individual emission peaks at 660 nm and 604 nm. Figure 2 shows the combined emission peak from these two wavelength up-conversion materials peaking at 660 nm wavelength with emission peaks FWHM of 105 nm. In this case about 60 % (calculated from the peak intensities) of the semiconductor LED chip emission, is up-converted to 660 nm emission by two individual "up-conversion" materials.

In Figure 4, the semiconductor LED chip emission frequency peaks at a wavelength of 452 nm with emission peaks Full Width of Half Maximum (FWHM) of 25 nm (not shown in the figure). In this case the wavelength up-conversion is done by using one up-conversion material. Figure 3 shows the emission peak from this up-conversion material peaking at 658 nm wavelength with emission peaks FWHM of 80 nm. In this case about 100 % (calculated from the peak intensities) of the semiconductor LED chip emission, is up- converted to 658 nm emission by the up-conversion material. This can be noticed from the Figure 4, as there are no 452nm emission exiting the LED device.
In Figure 5, the semiconductor LED chip emission frequency peaks at a wavelength of 452 nm wavelength with emission peaks Full Width of Half Maximum (FWHM) of 25 nm. In this case the wavelength up-conversion is done by using one up-conversion material. Figure 5 shows the emission peak from this up-conversion material peaking at 602 nm wavelength with emission peaks FWHM of 78 nm. In this case about 95 % (calculated from the peak intensities) of the semiconductor LED chip emission, is up-converted to 602 nm emission by the wavelength up-conversion material. For the above mentioned spectrum the device can be constructed as explained in details below. The semiconductor LED chip emission frequency should be selected the way that it is suitable for exciting the used phosphor molecules in the device. The emission from the LED chip can be between 400 nm and 470nm. The used phosphor molecule or molecules should be selected the way that a desired emission spectra from the LED is achieved.
In the following we will describe a procedure for using two phosphor materials ( wavelength up-conversion materials) in the LED device to achieve the desired spectra (cf. Figures 6a to 6c).
Phosphor A and Phosphor B are mixed in a pre-determined ratio to achieve desired phosphor emission spectra from the LED device (cf. Figure 6a). The ratio of the phosphors can be for example 99: 1 (A:B) to 1 :99. This mixture of phosphors A+B is mixed into a material C (for example a polymer) at a pre-determined concentration to form an
"encapsulant". The concentration of the phosphors in material C can be for example 99:1 (phosphor mixture : material C) to 1 :99. This mixture of material C + phosphors (A and B) is then deposited in direct proximity of the LED chip (Figure 6b and 6c). By "proximity" we mean it can be deposited directly on the surface of the LED chip or spaced out with other optical material. The concentration of the phosphor mixture in material C determines the wavelength up-conversion amount of the semiconductor LED chip emission frequency, meaning how much of the "original" LED chip emission frequency is seen in the final LED device emission and how much is converted into the phosphor emission in the LED device. The thickness of the encapsulant (into which the phosphor is mixed) typically varies from 0.1 um to 20 mm, in particular 1 um to 10 mm, preferably 5 um to 10 mm, for example about 10 um to 5 mm, depending on the concentration of the phosphor. Typically the concentration of the phosphor (calculated from the total weight of the encapsulant) is about 0.1 to 20 %, preferably about 1 to 10 %.

The wavelength up-conversion can be 100 %, meaning that there is only phosphor emission seen from the LED device or it can be less than 100 %, meaning that some of the LED chip emission is transmitted out from the LED device.

To summarize, by tuning the phosphor ratio A:B it is possible to tune the desired phosphor emission spectra from the LED device and by tuning the phosphor concentration in material C it is possible to tune the desired LED chip emission quantity/amount for the LED device.

The amount (physical thickness) of material C (with certain phosphor concentration) on top of the LED chip also affects the amount of LED chip emission transmitting from the LED device. The thicker the material C layer on top of the LED chip, the lower the transmission.
Material C can be for example a solvent, inorganic or organic polymer, silicon polymer, siloxane polymer or other polymer where the phosphor can be mixed into. Material C can have one or more components that have to be mixed prior to usage together with the phosphor. Material C can be a thermally or UV curable material.
The mixture of the phosphor(s) and the solvent material C (solid or liquid) can be translucent or transparent, preferably transparent, to allow for passage of the light emitted from the LED.
In one embodiment that is especially preferable the far red radiation (700-800 nm) is produced by for example europium-cerium co-doped Ba x Sr y ZnS_3 phosphors and/or cerium doped lanthanide oxide sulfides. These phosphor and sulfide types have emission peak maxima between 650-700 nm wavelength region and exhibit also broad (50-200nm) full width of half maximum and therefore also produce light emission at higher wavelength, i.e., above 700nm wavelength range. In addition to or as an alternative to using phosphors or other similar materials it is also possible to realize the wavelength up-conversion by means of at least one semiconductor quantum dot or the like, which is placed near the LED.

Example

A LED lighting fixture was constructed for comparison testing purposes based on the single LED device having identical output spectrum of the Figure 3. The lighting fixture consisted of 60 individual LED units having a power consumption of 69 W which includes the power consumption of the AC/DC constant current driver.


The comparison devices were commercial HPS (High Pressure Sodium) lamp greenhouse lighting fixture with total power consumption of 420W and commercial LED greenhouse LED fixture. The commercial LED fixture was based on individual blue and red LED devices having total power consumption of 24W.

The LED lighting fixture according to the present invention was tested against the above- mentioned commercial LED devices using following PPF measurement procedure and arrangement.
PAR irradiance (irradiance value between 400 nm and 700 nm) and PPF- values were calculated by measuring the light fixture spectra from 300 nm to 800 nm and absolute irradiance value at band from 385 nm to 715 nm. The spectrum of each lamp were measured with ILT700A spectroradio meter at one distance. The absolute irradiance- values were measured with precision pyranometer at certain distances and were later used to calculate the absolute spectra to these distances. These absolute spectra were used to calculate PAR- and PPF calculations. PAR-irradiance (W/m[SUP]2[/SUP]) was calculated by integrating the absolute spectrum from 400 nm to 700 nm. PPF-values were calculated by first translating the irradiance value of each "channel" of the spectrum from W/m[SUP]2[/SUP] to microeinsteins and then integrating this spectrum over the desired wavelength band.
The comparison result of these two commercial greenhouse lamp fixtures and the LED fixture according to the innovation are presented in the table below. The results are also normalized against the commercial HPS lighting fixture. Type HPS Ref. Grow LED LED of Invention

(bold :hps ,normal commer. led B+R ,underlined :custom warm white led )
Power (W) : 420 24 69

Total PPF :164 26 88

PPF / Watt : 0.39 1.08 1.28

PPF efficiency normalized to Ref. HPS(%) : 1 2.77 3.27

PPF efficiency normalized to Ref. HPS (%) :100% 277% 327%



As will appear from the test results shown, an LED lighting fixture according to the present invention provides 3.27 times higher PPF efficiency compared to HPS and 1.18 times better PPF efficiency compared to commercial LED greenhouse fixture based on individual blue and red LED devices. Naturally all of the LEDs or lighting fixtures are arranged to be used especially in greenhouses for plant cultivation as greenhouse lights in many embodiments of the invention.

The above examples have described embodiments in which there is one Light Emitting Diode (LED) having the indicated spectral characteristics. Naturally, the present lighting fixtures may comprise a plurality of LEDs, at least some (say 10 % or more) or preferably a majority (more than 50 %) of which have the indicated properties and characteristics. It is therefore possible to have fixtures comprising combinations of conventional LEDs and LEDs of the present kind. There are no particular upper limits to the number of LEDs. Thus, lighting fixtures of the present kind can have roughly 1 up to 10,000 LEDs, typically 1 to 1000 LEDs, in particular 1 to 100 LEDs.
It is in accordance with the invention to include LEDs with different peak emissions in one luminaire and to control these in order to provide a desirable spectral emission to achieve a determined growth result or physiological response. In this way, the lighting system would allow a versatile control of lighting intensity and spectrum. Ultimately, the control of other abiotic parameters such as C0[SUB]2[/SUB] concentration, temperature, daylight availability and humidity could be integrated within the same control system together with lighting, optimizing the crop productivity and the overall management of the greenhouse.

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